Semiconductor package and method of forming the same

ABSTRACT

According to an exemplary embodiment, a semiconductor package is provided. The semiconductor package includes: a chip having a plurality of joint pads; a component having a plurality of metal caps on one side and having a grinded surface on the other side, wherein the metal caps are in contact with the joint pads of the chip.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part of U.S. patent applicationSer. No. 14/470,999 filed on Aug. 28, 2014, which is hereby incorporatedby reference in its entirety.

BACKGROUND

For mobile applications, a form factor refers to a mobile device's size,shape, and style, as well as the layout and position of the components.Consumers prefer devices with a thinner form factor, making manufactureof the device more difficult. Therefore, there is a need to meet theabove demand.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a sectional view illustrating an exemplary semiconductorpackage in accordance with some embodiments.

FIGS. 2-10 are sectional views illustrating the exemplary semiconductorpackage in accordance with some embodiments.

FIG. 10 is a sectional view illustrating an exemplary semiconductorpackage in accordance with some embodiments.

FIGS. 11-19 are sectional views illustrating the exemplary semiconductorpackage in accordance with some embodiments.

FIGS. 20(a), 20(b) are top views illustrating the shape of the pad inthe backside redistribution layer of the exemplary semiconductor packageand its contact with the SMD component by using solders in accordancewith some embodiments.

FIGS. 21(a), 21(b) are top views illustrating the shape of the pad inthe backside redistribution layer of the exemplary semiconductor packageand its contact with the SMD component by using solders in accordancewith some embodiments.

FIGS. 22(a), 22(b) are top views illustrating the shape of the pad inthe backside redistribution layer of the exemplary semiconductor packageand its contact with the SMD component by using solders in accordancewith some embodiments.

FIGS. 23, 24 are top views illustrating the shape of the pad in thebackside redistribution layer of the exemplary semiconductor package inaccordance with some embodiments.

FIG. 25 is a flow chart for a method of forming a semiconductor packagecomprising a chip and a component in accordance with some embodiments.

FIG. 26 is a flow chart for a method of forming a semiconductor packagecomprising a chip and a component in accordance with some embodiments.

FIGS. 27-32 are sectional views illustrating an exemplary semiconductorpackage in accordance with some embodiments.

FIG. 33 is sectional view illustrating an exemplary semiconductorpackage in accordance with some embodiments.

FIG. 34 is sectional view illustrating an exemplary semiconductorpackage in accordance with some embodiments.

FIGS. 35-38 are sectional views illustrating a connection between a chipand an IPD component of an exemplary semiconductor package in accordancewith some embodiments.

FIG. 39 is a flow chart for a method of forming a semiconductor packagecomprising a chip and a component in accordance with some embodiments.

FIG. 40 is a flow chart for a method of forming a semiconductor packagecomprising a chip and a component in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

For mobile application, a form factor refers to a mobile device's size,shape, and style, as well as the layout and position of the components,such as embedded SMD components and chips. Consumers prefer devices witha thinner form factor, which makes manufacture of the devices moredifficult.

The disclosure provides a novel package structure which integrates anintegrated passive device (IPD) into an integrated fan-out (INFO)structure. Instead of picking and placing a thin IPD component (e.g., 50micrometers) over a chip, the disclosure picks and places a thicker IPDcomponent (e.g., 100 micrometers) over the chip and further grinds theIPD component to produce a thinner one (e.g., 50 micrometers). Thedisclosure overcomes the issue of handling the thin IPD component thatis easily damaged during picking and placing. Additionally, shortdistance between the IPD component and the chip will result in betterelectric performance without reliability trade-off.

In order to reach the thinner package form factor without sacrificingsignal integrity, the SMD components may be placed between the substrate(e.g., PCB) and the chips, and by the side of ball grid array (“BGA”)balls. The distance therebetween is determined by the BGA balls. The SMDcomponents should have a height which is less than a stand-off height ofthe BGA balls. In one embodiment, the height of the SMD components isabout 130-150 micrometers; the height of the pre-solder is about 20micrometers; and the stand-off-height of the BGA balls is about 140-170micrometers. It has been demonstrated that the design margin for theplacement of the SMD components is very tight. Therefore, to enlarge thedesign margin, this disclosure embeds the SMD in the molding.

In one embodiment, a new package structure is disclosed. Some pads of abackside redistribution layer (B/S RDL) in the package are designed withan open structure. By using the open structure, the molding material canflow into the space under the SMD component. The chip may be selectedfrom the group consisting of silicon semiconductors or III-Vsemiconductors. The chips may include a microelectromechanical system(MEMS).

FIG. 1 is a sectional view illustrating an exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 1, atemporary bonding layer 104 is coated over a carrier 102. The carrier102 may be formed of, for example, metal or glass. The temporary bondinglayer 104 is formed of, for example, glue.

An insulator layer 106 is formed over the temporary bonding layer 104.The insulator layer 106 may be formed of, for example, epoxy or polymer.A backside redistribution layer 108 is formed over the insulator layer106, then, the backside redistribution layer 108 is patterned by using amask (not shown). The material for the backside redistribution layer 108may include, but is not limited to, for example, Cu, Al, AlCu, Al alloy,Cu alloy, or other conductive materials.

FIG. 2 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 2, apre-solder (not shown) is provided over a portion 202 of the backsideredistribution layer 108. An SMD component 204 is provided over thebackside redistribution layer 108. The pre-solder (not shown) isdisposed between the SMD component 204 and the portion 202 of thebackside redistribution layer 108. The SMD component 204 may be, forexample, passive components, such as resistor, inductors, or capacitors.

FIG. 3 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 3, a chip302 is provided over the backside redistribution layer 108. In details,the chip 302 adheres to the backside redistribution layer 108 by a gluelayer 310. The chip 302 includes a die 303, an interconnect layer 304, apassivation layer 305, and a sacrificial layer 306. The interconnectlayer 304 includes interconnections 314. The passivation layer 305includes a pad 315. The sacrificial layer 306 includes a copper (Cu)pillar 316. The die 303 connects to the Cu pillar 316 through theinterconnections 314 and the pad 315. The interconnect layer 304 may bemade of low-k material. The sacrificial layer 306 may be made ofpolymer. In the embodiments, the chip 302 may be selected from the groupconsisting of silicon semiconductors or III-V semiconductors. The chipsmay include a microelectromechanical system (MEMS). FIG. 4 is asectional view illustrating the exemplary semiconductor package inaccordance with some embodiments. As shown in FIG. 4, a molding compound402 is provided over the SMD component 204 and adjacent to the chip 302.The molding compound 402 may be made of silica, organic materials, orepoxy resins. The molding step may be performed to form the moldingcompound 402 surrounding the SMD component 204 and adjacent to the chip302. The molding compound 402 may be partially removed from the top ofthe chip 302 to expose the upper surface of the chip 302.

FIG. 5 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 5, a viahole 502 is opened in the molding compound 402. In the embodiment, thevia hole 502 exposes the backside redistribution layer 108.

FIG. 6 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 6, a via602 is provided in the via hole 502 of the molding compound 402, and thevia 602 electrically connects to the backside redistribution layer 108.The via 602 may be made of, for example, copper or tin. In theembodiment, the formation of the molding compound 402 and the via 602includes: first forming the molding compound 402; opening the via hole502 in the molding compound 402 to expose the backside redistributionlayer 108; and then forming the via 602 in the via hole 502. In someembodiments, such formation may include: first forming the via 602; andthen forming the molding compound 402. That is, the sequence of theformation of the molding compound 402 and the via 602 may alter.

FIG. 7 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 7, theportion 202 and the portion of 704 of the backside redistribution layer108 are connected, then a front redistribution layer 702 is providedover the chip 302 and the via 602 to connect the chip 302 and the SMDcomponent 204 by using the backside redistribution layer 108, the via602, and the front redistribution layer 702. The front redistributionlayer 702 surrounded by a polybenzoxazole (PBO) layer 706 may include atrace 711 and an under bump metal (UBM) 712. The end of the trace 711may provide a landing pad (not shown).

The trace 711 and the PBO layer 706 can be either a single layer orstacked multiple layers. In the embodiment with the trace 711 and thePBO layer 706 having stacked multiple layers, the formation of the PBOlayer 706 and the trace 711 may include: forming a first PBO layer overthe chip 302 and the molding compound 402; etching the first PBO layerand forming a first trace layer in the etched portion; repeating theformation and the etching process; and forming the UBM 712 over the endof the trace 711 (landing pad). The material for the frontredistribution layer 702 may comprise, but is not limited to, forexample Cu, Al, AlCu, Al alloy, Cu alloy, or other conductive materials.As such, a semiconductor package 700 is provided. The SMD components 204are placed in the molding compound 402 and are not placed between BGAballs. So the SMD components 204 are no longer constrained by a heightwhich is less than the stand-off-height of the BGA balls. While having athinner package form factor without sacrificing signal integrity, thedesign margin for placement of the SMD components 204 relaxes.

FIG. 8 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 8, aplurality of metal bumps 802 are provided and connected to the chip 302and the SMD component 204 by the front redistribution layer 702. Theformation of the metal bumps 802 on the front redistribution layer 702may be realized by, for example, ball grid array (BGA) solder bumping,which is a type of surface-mount packaging.

FIG. 9 is a sectional view illustrating the exemplary semiconductordevice using the exemplary semiconductor package in accordance with someembodiments. As shown in FIG. 9, the semiconductor package 700 isdebonded from the carrier 102. The insulator layer 106 and the temporarybonding layer 104 of the semiconductor package 700 are opened. Thesemiconductor package 700 is flipped upside down and connected to aprinted circuit board 914.

In the embodiment, the semiconductor package 902 includes two stackedmobile DDRs (or LPDDR) 904, 905 and a packaging substrate 903. Thepackaging substrate 903 includes a redistribution layer (not shown)similar to the abovementioned, and connects to the two mobile DDRs 904,905 through bonding wires 906. Metal bumps 910 provide electricalconnection between the backside redistribution layer 108 and thepackaging substrate 903. Therefore, the semiconductor package 902 isbonded to the backside redistribution layer of the semiconductorpackages 700, so that a package-on-package structure 900 including thesemiconductor packages 700, 902 is provided.

FIG. 10 is a sectional view illustrating an exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 10, atemporary bonding layer 1004 is coated over a carrier 1002. The carrier1002 may be formed of, for example, metal or glass. The temporarybonding layer 1004 is formed of, for example, glue.

A first insulator layer 1006 is formed over the temporary bonding layer1004. The first insulator layer 1006 may be formed of, for example,epoxy or polymer. A backside redistribution layer 1008 is formed overthe first insulator layer 1006, then, the backside redistribution layer1008 is patterned by using a mask (not shown). The material for thebackside redistribution layer 1008 may comprise, but is not limited to,for example Cu, Al, AlCu, Al alloy, Cu alloy, or other conductivematerials.

FIG. 11 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 11, asecond insulator layer 1102 is formed over the backside redistributionlayer 1008 and the first insulator layer 1006. Then the second insulatorlayer 1102 is patterned to form a recess 1106 exposing a portion of thebackside redistribution layer 1008. The second insulator layer 1102 maybe formed of, for example, epoxy or polymer. A detail portion 1104 forsolder wetting will be described.

FIG. 12 is a sectional view illustrating detail portion 1104 of theexemplary semiconductor package in accordance with some embodiments. Asshown in FIG. 12, a pre-solder 1202 is provided in the recess 1106 ofthe second insulator layer 1102. Another pre-solder 1203 is attached tothe SMD component 1204.

FIG. 13 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 13, thepre-solders 1202, 1203 are combined to produce a solder joint anddisposed between the SMD component 1204 and the portion 1206 of thebackside redistribution layer 1008, so the SMD component 1204 contactswith the pre-solders 1202, 1203 in the recess of the second insulatorlayer 1102. The SMD component 1204 may be passive components, such asresistor, inductors or capacitors.

FIG. 14 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 14, a chip1402 is provided over the second insulator layer 1102. The chip 1402 maybe selected from the group consisting of silicon semiconductors or III-Vsemiconductors. The chips may include a microelectromechanical system(MEMS).

FIG. 15 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 15, amolding compound 1502 is provided over the SMD component 1204 andadjacent to the chip 1402. The molding compound 1502 may be made ofsilica, organic materials, or epoxy resins. The molding step may beperformed to form the molding compound 1502 surrounding the SMDcomponent 1204 and adjacent to the chip 1402. The molding compound 1502may be partially removed from the top of the chip 1402 to expose theupper surface of the chip 1402.

Before providing the molding compound 1502, a portion of the secondinsulator layer 1102 is removed to form a recess and to expose a portion1506 of the backside redistribution layer 1008, and a conductivematerial 1504 is filled in the recess for further electrical connection.

FIG. 16 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 16, a viahole 1602 is opened in the molding compound 1502.

FIG. 17 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 17, a via1702 is provided in the via hole 1602 of the molding compound 1502.

FIG. 18 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 18, theportion 1206 and the portion of 1506 of the backside redistributionlayer 1108 are connected, then a front redistribution layer 1802 isprovided over the chip 1402 and the via 1702 to connect the chip 1402and the SMD component 1204 by using the backside redistribution layer1108, the via 1702, and the front redistribution layer 1802. Thematerial for the front redistribution layer 1802 may comprise, but isnot limited to, for example Cu, Al, AlCu, Al alloy, Cu alloy, or otherconductive materials. As such, a semiconductor package 1800 is provided.

The SMD components 1204 are placed in the molding compound 1502 and arenot placed between BGA balls. So the SMD components 1204 are no longerconstrained by a height which is less than the stand-off-height of theBGA balls. While having a thinner package form factor withoutsacrificing signal integrity, the design margin for placement of the SMDcomponents 1204 relaxes.

FIG. 19 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 19, aplurality of metal bumps 1902 are provided and connected to the chip1402 and the SMD component 1204 by the front redistribution layer 1802.Furthermore, the semiconductor package 1800 is debonded from the carrier1002. The semiconductor package 1800 may be provided over and connectedto a printed circuit board (not shown).

In the embodiment, the sequence of the processes abovementioned providesan example and does not limit scope of the disclosure. There are otherpossibilities to realize the semiconductor package and the method offorming the same, such as an alternative sequence which fabricates thevia 1702 prior to the molding compound 1502.

FIGS. 20(a), 20(b) are top views illustrating the shape of the pad inthe backside redistribution layer of the exemplary semiconductor packageand its contact with the SMD component by using solders in accordancewith some embodiments. As shown in FIG. 20(a), a pad 2002 with a notch2003 is provided in the backside redistribution layer. The notch 2003 isdesigned to define location of the pad 2002. The width of the pad 2002is about 450 micrometers; the length of the pad 2002 is about 400micrometers. The width and the length of the notch 2003 are about 2-10micrometers. As shown in FIG. 20(b), a pre-solder 2006 is placed overthe pad 2002 for joining the pad 2002 and an SMD component 2004. Thepre-solder 2006 is confined by the notch 2003.

FIGS. 21(a), 21(b) are top views illustrating the shape of the pad inthe backside redistribution layer of the exemplary semiconductor packageand its contact with the SMD component by using solders in accordancewith some embodiments. As shown in FIG. 21(a), a pad 2102 with a slot2103 is provided in the backside redistribution layer. The slot 2103 isdesigned to define location of the pad 2102. The width of the pad 2102is about 450 micrometers; the length of the pad 2102 is about 400micrometers. The width of the slot 2103 is about 30-60 micrometers; thelength of the slot 2103 is about 20 micrometers. The number of the slotsis not limited and varies based on pad designs. As shown in FIG. 21(b),a pre-solder 2106 is placed over the pad 2102 for joining the pad 2102and an SMD component 2104. The pre-solder 2106 is confined by the slot2103. Additionally, different shapes of the slots can be applied forstopping solder wetting expansion.

FIGS. 22(a), 22(b) are top views illustrating the shape of the pad inthe backside redistribution layer of the exemplary semiconductor packageand its contact with the SMD component by using solders in accordancewith some embodiments. As shown in FIG. 22(a), a u-shape pad 2202 with aopen structure 2203 is provided in the backside redistribution layer.The open structure 2203 is designed to define location of the u-shapepad 2202. The width of the open structure 2203 is about 450 micrometers;the length of the open structure 2203 is about 50 micrometers. As shownin FIG. 22(b), a pre-solder 2206 is placed over the u-shape pad 2202 tojoin the u-shape pad 2202 and an SMD component 2204. By using the openstructure 2203, the molding material can flow into the space under theSMD component 2204.

FIGS. 23, 24 are top views illustrating the shape of the pad in thebackside redistribution layer of the exemplary semiconductor package inaccordance with some embodiments. In order to stop solder wettingexpand, different shapes and combinations of the slots can be applied,such as a pad 2302 having three aligned slots in FIG. 23, and even a pad2402 having four slots in FIG. 24.

FIG. 25 is a flow chart for a method of forming a semiconductor packagecomprising a chip and a component in accordance with some embodiments.As shown in FIG. 25, a method 2500 is provided. The method 2500 includesthe following operations: providing a temporary bonding layer over acarrier (2502); forming an insulator layer over the temporary bondinglayer (2504); forming a backside redistribution layer over the insulatorlayer (2506); providing a pre-solder over a portion of the backsideredistribution layer (2508); providing the chip and the component overthe backside redistribution layer and contacting the component to thepre-solder (2510).

The operation 2506 further includes forming a pad having a notch in thebackside redistribution layer. The operation 2506 further includesforming a pad having a slot in the backside redistribution layer. Theoperation 2506 further includes forming a u-shape pad having a openstructure in the backside redistribution layer. The method 2500 furtherincludes providing a plurality of metal bumps connected to the chip andthe component by the front redistribution layer. The method 2500 furtherincludes: providing a molding compound over the component and adjacentto the chip; opening a via hole in the molding compound; providing a viain the via hole of the molding compound; and providing a frontredistribution layer over the chip and the via to connect the chip andthe component by using the backside redistribution layer, the via andthe front redistribution layer; debonding the semiconductor package fromthe carrier; and providing the semiconductor package over and connectedto a printed circuit board. The operation 2510 further includesproviding a surface-mount device (SMD) over the backside redistributionlayer. The operation 2504 further includes forming the insulator layermade of polymer over the temporary bonding.

FIG. 26 is a flow chart for a method of forming a semiconductor packagecomprising a chip and a component in accordance with some embodiments.As shown in FIG. 26, a method 2600 is provided. The method 2600 includesthe following operations: providing a temporary bonding layer over acarrier (2602); forming a first insulator layer over the temporarybonding (2604); forming a backside redistribution layer over theinsulator layer (2606); forming a second insulator layer over thebackside redistribution layer (2608); patterning the second insulatorlayer to form a recess exposing a portion of the backside redistributionlayer (2610); providing a pre-solder in the recess of the secondinsulator layer (2612); providing the chip and the component over thesecond insulator layer, and contacting the component to the pre-solderin the recess of the second insulator layer (2614).

The operation 2606 further includes forming a pad having a notch in thebackside redistribution layer. The operation 2606 further includesforming a pad having a slot in the backside redistribution layer. Theoperation 2606 further includes forming a u-shape pad having a openstructure in the backside redistribution layer. The method 2600 furtherincludes providing a plurality of metal bumps connected to the chip andthe component by the front redistribution layer. The method 2600 furtherincludes: providing a molding compound over the component and adjacentto the chip; opening a via hole in the molding compound and the secondinsulator layer; providing a via in the via hole of the molding compoundand the second insulator layer; and providing a front redistributionlayer over the chip and the via to connect the chip and the component byusing the backside redistribution layer, the via and the frontredistribution layer; debonding the semiconductor package from thecarrier; and providing the semiconductor package over and connected to aprinted circuit board. The operation 2614 further includes providing asurface-mount device (SMD) over the second insulator layer.

According to an exemplary embodiment, a method of forming asemiconductor package comprising a chip and a component is provided. Themethod includes the following operations: providing a temporary bondinglayer over a carrier; forming a first insulator layer over the temporarybonding; forming a backside redistribution layer over the insulatorlayer; forming a second insulator layer over the backside redistributionlayer; patterning the second insulator layer to form a recess exposing aportion of the backside redistribution layer; providing a pre-solder inthe recess of the second insulator layer; providing the chip and thecomponent over the second insulator layer, and contacting the componentto the pre-solder in the recess of the second insulator layer.

According to an exemplary embodiment, a method of forming asemiconductor package comprising a chip and a component is provided. Themethod includes the following operations: providing a temporary bondinglayer over a carrier; forming an insulator layer over the temporarybonding layer; forming a backside redistribution layer over theinsulator layer; providing a pre-solder over a portion of the backsideredistribution layer; providing the chip and the component over thebackside redistribution layer and contacting the component to thepre-solder.

According to an exemplary embodiment, a semiconductor package isprovided. The semiconductor package includes: a backside redistributionlayer; at least one component, disposed over and connected to thebackside redistribution layer; at least one chip adjacent to the atleast one component; a molding compound disposed between the at leastone chip and the at least one component; a via, disposed in the moldingcompound and connected to the backside redistribution layer; and a frontredistribution layer, disposed over the chip and the via, wherein thechip and the at least one component are connected by using the backsideredistribution layer, the via and the front redistribution layer.

FIG. 27 is a sectional view illustrating an exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 27, atemporary bonding layer 2704 is coated over a carrier 2702. The carrier2702 may be formed of, for example, metal or glass. The temporarybonding layer 2704 is formed of, for example, glue. The thickness of thetemporary bonding layer 2704 may be about 1 micrometers.

An insulator layer 2706 is formed over the temporary bonding layer 2704.The insulator layer 2706 may be formed of, for example, epoxy orpolymer. For each of the redistribution layer (not shown), the thicknessof the insulator layer 2706 may be about 4 micrometers to 15micrometers. An adhesive layer 2708 is formed over the insulator layer2706. The adhesive layer 2708 may be formed of, for example, polymer.The thickness of the adhesive layer 2708 may be about 10 micrometers to50 micrometers. A chip 2710 is provided over the adhesive layer 2708.The chip 2710 adheres to insulator layer 2706 by the adhesive layer2708. In the embodiments, the chip 2710 may be selected from the groupconsisting of silicon semiconductors or III-V semiconductors. The chip2710 may include a microelectromechanical system (MEMS). The thicknessof the chip 2710 may be about 50 micrometers to 500 micrometers.

Joint pads 2712, pillars 2714, and vias 2716 made of metallic materialsare formed over the chip 2710. In an embodiment, joint pads 2712,pillars 2714, and vias 2716 are made of metallic materials containingcopper (Cu). The thickness of the joint pads 2712 may be about 1micrometers to 8 micrometers. The width of the joint pads 2712 may beabout 20 micrometers to 400 micrometers. The thickness of the pillars2714 may be about 70 micrometers to 200 micrometers. The width of thepillars 2714 may be about 50 micrometers to 300 micrometers. Thethickness of the vias 2716 may be about 100 micrometers to 250micrometers. The width of the vias 2716 may be about 80 micrometers to300 micrometers.

FIG. 28 is a sectional view illustrating an exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 28, anintegrated passive device (IPD) component 2806 with metal caps 2802 andmetal bumps 2804 are provided over the joint pads 2712. In anembodiment, the metal bumps 2804 are made of copper or copper-containingalloys. In an embodiment, the metal caps 2802 are made of solder,nickel, gold, copper or alloys thereof. The thickness of the metal caps2802 may be about 10 micrometers to 20 micrometers. The thickness of themetal bumps 2804 may be about 20 micrometers. The IPD component 2806electrically connects to the chip 2710 through the metal caps 2802, themetal bumps 2804, and the joint pads 2712. The thickness of the IPDcomponent 2806 may be about 100 micrometers to 300 micrometers. Anunderfill 2808 surrounds the joint pads 2712, the solder caps 2802, andthe metal bumps 2804 of the IPD component 2806.

FIG. 29 is a sectional view illustrating an exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 29, amolding compound 2902 is overmolded onto the IPD component 2806 andadjacent to the chip 2710 and the underfill 2808. The molding compound2902 at least covers the top of the IPD component 2806, the top of thepillars 2714, and the top of the vias 2716. The thickness of the moldingcompound 2902 may be about 200 micrometers to 350 micrometers. Thematerial of the molding compound 2902 may be, for example, epoxy.

FIG. 30 is a sectional view illustrating an exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 30, agrinding process is performed on the molding compound 2902, the IPDcomponent 2806, the pillars 2714, and the vias 2716 so as to produce agrinded surface 3002 on the top side of the IPD component 2806. Thegrinding process reduces the thickness of the molding compound 2902, thethickness of the IPD component 2806, the thickness of the pillars 2714,and the thickness of the vias 2716. For example, the thickness of theIPD component 2806 is reduced from about 100 micrometers to 50micrometers. As such, instead of picking and placing a thin IPDcomponent (e.g., 50 micrometers) over the chip 2710, the disclosurepicks and places a thicker IPD component (e.g., 100 micrometers) overthe chip 2710 and further grinds the IPD component to a thinner one(e.g., 50 micrometers). The disclosure overcomes the issue of handlingthe thin IPD component that is easily damaged during picking andplacing. Additionally, short distance between the IPD component 2806 andthe chip 2710 will result in better electric performance withoutreliability trade-off.

FIG. 31 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 31, afront redistribution layer 3102 is provided in an insulator layer 3101over the IPD component 2806, the pillar 2714, and the via 2716. The chip2710 connects to the front redistribution layer 3102 through the pillar2714. The material for the front redistribution layer 3102 may comprise,but is not limited to, for example Cu, Al, AlCu, Al alloy, Cu alloy, orother conductive materials. Metal bumps 3106 connects to the frontredistribution layer 3102 through an under bump metal (UBM) 3104. Theformation of the metal bumps 3106 on the front redistribution layer 3102may be realized by, for example, ball grid array (BGA) solder bumping,which is a type of surface-mount packaging. The IPD components 2806 areplaced in the molding compound 2902 and connect to the chip 2710 throughthe joint pad 2712. The IPD components 2806 are not placed between themetal bumps 3106. Therefore, the IPD components 2806 are no longerconstrained by a height which is less than the stand-off-height of themetal bumps 3106.

In the embodiment, the sequence of the processes abovementioned providesan example and does not limit scope of the disclosure. There are otherpossibilities to realize the semiconductor package and the method offorming the same, such as an alternative sequence which fabricates thevia 2716 prior to the molding compound 2902.

FIG. 32 is a sectional view illustrating the exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 32, asemiconductor package 3201 is debonded from the carrier 2702 in FIG. 31.The insulator layer 2706 of the semiconductor package 3201 is opened.The semiconductor package 3201 is flipped upside down and connects toanother semiconductor package 3202. In the embodiment, the semiconductorpackage 3202 includes two stacked mobile DDRs (or LPDDR) 3204, 3205 anda packaging substrate 3203. The packaging substrate 3203 includes aredistribution layer (not shown), and connects to the two chips 3204,3205 through bonding wires 3206. For example, the two chips 3204, 3205are mobile DDRs. Metal bumps 3210 provide electrical connection betweenthe vias 2716 and the packaging substrate 3203. Therefore, apackage-on-package structure 3200 including the semiconductor packages3201, 3202 is provided.

FIG. 33 is a sectional view illustrating another exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 33, apackage-on-package structure 3300 similar to the structure 3200 isprovided. Compared to FIG. 32, the package-on-package structure 3300further includes a printed circuit board 3306 having a redistributionlayer 3304. Additionally, metal bumps 3310 connects to vias 3316 throughanother redistribution layer 3318. Also, a connection structure 3320between an IPD component 3324 and a chip 3322 does not utilize anyunderfill, and a molding compound 3326 surrounds metal caps 3328.

FIG. 34 is a sectional view illustrating another exemplary semiconductorpackage in accordance with some embodiments. As shown in FIG. 34,another package-on-package structure 3400 similar to the structure 3300is provided. The package-on-package structure 3400 differentiates fromthe structure 3300 by a connection structure 3420 with an underfill3430. The connection structure 3420 includes the underfill 3430surrounding metal caps 3428 and joint pads 3432.

FIG. 35 is a sectional view illustrating a connection between a chip andan IPD component of an exemplary semiconductor package in accordancewith some embodiments. As shown in FIG. 35, a chip 3510 having an I/Opad 3512 is provided. The chip 3510 may be selected from the groupconsisting of silicon semiconductors or III-V semiconductors. The chip3510 may include a microelectromechanical system (MEMS). An insulationlayer 3520 made of polymer is formed over the chip 3510 and the I/O pad3512. Then, a seed metal layer 3530 is sputtered on the insulation layer3520. The seed metal layer 3530 may be made of Ti or Cu.

FIG. 36 is a sectional view illustrating a connection between a chip andan IPD component of an exemplary semiconductor package in accordancewith some embodiments. As shown in FIG. 36, a joint pad 3602 is formedover the seed metal layer 3530. The formation of the joint pad 3602 mayincludes photoresist coating, photoresist exposure, electroplating, andstripping. The thickness of the joint pad 3602 may be about 4micrometers.

FIG. 37 is a sectional view illustrating a connection between a chip andan IPD component of an exemplary semiconductor package in accordancewith some embodiments. As shown in FIG. 37, a I/O pillar 3702 is formedover the seed metal layer 3530. The formation of the I/O pillar 3702 mayincludes dry photoresist coating, photoresist exposure, electroplating,and stripping. The thickness of the I/O pillar 3702 may be about 90micrometers.

FIG. 38 is a sectional view illustrating a connection between a chip andan IPD component of an exemplary semiconductor package in accordancewith some embodiments. As shown in FIG. 38, portions of the seed metallayer 3530 except for those covered by the joint pad 3602 and the I/Opillar 3702 are removed so that the insulation layer 3520 is exposed.The following steps starting from FIG. 28 may be performed on aconnection structure 3800 in FIG. 38.

FIG. 39 is a flow chart for a method of forming a semiconductor packagecomprising a chip and a component in accordance with some embodiments.As shown in FIG. 39, a method 3900 is provided. The method 3900 includesthe following operations: providing a temporary bonding layer over acarrier (3902); forming an insulator layer over the temporary bondinglayer (3904); providing an adhesive layer over the insulator layer(3906); providing the chip over the adhesive layer (3908); providing aplurality of joint pads over the chip (3910); connecting the componentwith a plurality of metal bumps and metal caps to the joint pads (3912);overmolding a molding compound over the component and adjacent to thechip (3914); and grinding the molding compound and the component toreduce a thickness of the component (3916).

FIG. 40 is a flow chart for a method of forming a semiconductor packagecomprising a chip and a component in accordance with some embodiments.As shown in FIG. 40, a method 4000 is provided. The method 4000 includesthe following operations: providing a temporary bonding layer over acarrier (4002); forming an insulator layer over the temporary bondinglayer (4004); attaching the chip to the insulator layer by using anadhesive layer (4006); providing a plurality of joint pads over the chip(4008); connecting the component with a plurality of metal bumps andmetal caps to the joint pads (4010); providing an underfill thatsurrounds the joint pads, the metal bumps, and the metal caps of thecomponent (4012); overmolding a molding compound over the component andadjacent to the chip (4014); and grinding the molding compound and thecomponent to reduce a thickness of the component (4016).

According to an exemplary embodiment, a method of forming asemiconductor package comprising a chip and a component is provided. Themethod includes the following operations: providing a temporary bondinglayer over a carrier; forming an insulator layer over the temporarybonding layer; providing an adhesive layer over the insulator layer;providing the chip over the adhesive layer; providing a plurality ofjoint pads over the chip; connecting a component with a plurality ofmetal bumps and metal caps to the joint pads; overmolding a moldingcompound over the component and adjacent to the chip; and grinding themolding compound and the component to reduce a thickness of thecomponent.

According to an exemplary embodiment, a method of forming asemiconductor package comprising a chip and a component is provided. Themethod includes the following operations: providing a temporary bondinglayer over a carrier; forming an insulator layer over the temporarybonding layer; attaching the chip to the insulator layer by using anadhesive layer; providing a plurality of joint pads over the chip;connecting a component with a plurality of metal bumps and metal caps tothe joint pads; providing an underfill that surrounds the joint pads,the metal bumps, and the metal caps of the component; overmolding amolding compound over the component and adjacent to the chip; andgrinding the molding compound and the component to reduce a thickness ofthe component.

According to an exemplary embodiment, a semiconductor package isprovided. The semiconductor package includes: a chip having a pluralityof joint pads; a component having a plurality of metal caps on one sideand having a grinded surface on the other side, wherein the metal capsare in contact with the joint pads of the chip.

According to an exemplary embodiment, a semiconductor package isprovided. The semiconductor package includes: a chip having a pluralityof joint pads; a plurality of pillars connected to the chip; a componenthaving a plurality of metal caps in contact with the joint pads of thechip; and a redistribution layer connected to the chip through thepillars.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor package, comprising: a chiphaving a plurality of joint pads; a pillar formed on the chip, thepillar having a thickness that is greater than that of the joint pads; acomponent having a plurality of metal caps in physical contact with thejoint pads of the chip; and a redistribution layer formed in aninsulator layer and including a conductive material that is electricallyconnected to the chip through the pillar, wherein a distance between theinsulator layer and the chip is equal to the thickness of the pillar. 2.The semiconductor package of claim 1, wherein the component comprises anintegrated passive device.
 3. The semiconductor package of claim 1,wherein the component has a thickness of about 30 micrometers to 80micrometers.
 4. The semiconductor package of claim 1, wherein thecomponent has the metal caps on one side and a grinded surface on theother side.
 5. A semiconductor package, comprising: a chip having aplurality of joint pads; a pillar formed on the chip, the pillar havinga thickness that is greater than that of the joint pads; a componenthaving a plurality of metal caps on one side and having a grindedsurface on the other side, wherein the metal caps are in physicalcontact with the joint pads of the chip; and a redistribution layerformed in an insulator layer, the redistribution layer beingelectrically connected to the chip through the pillar, wherein adistance between the insulator layer and the chip is equal to thethickness of the pillar.
 6. The semiconductor package of claim 5,wherein the component comprises an integrated passive device.
 7. Thesemiconductor package of claim 5, further comprising an underfill thatsurrounds the joint pads and the metal caps of the component.
 8. Thesemiconductor package of claim 5, wherein the component has a thicknessof about 30 micrometers to 80 micrometers.
 9. The semiconductor packageof claim 5, wherein the component electrically connects to the chipthrough the metal caps and the joint pads.
 10. A semiconductor package,comprising: a chip having a plurality of joint pads; a pillar formed onthe chip, the pillar having a thickness that is greater than that of thejoint pads; a component having a plurality of metal caps in physicalcontact with the joint pads of the chip; a redistribution layer formedin an insulator layer and including a conductive material that iselectrically connected to the chip through the pillar, wherein adistance between the insulator and the chip is equal to the thickness ofthe pillar; and an underfill surrounding the joint pads and the metalcaps of the component.
 11. The semiconductor package of claim 10,wherein the component comprises an integrated passive device.
 12. Thesemiconductor package of claim 10, wherein the component has a thicknessof about 30 micrometers to 80 micrometers.
 13. The semiconductor packageof claim 10, wherein the component has the metal caps on one side and agrinded surface on the other side.
 14. The semiconductor package ofclaim 10, wherein the thickness of the joint pads is about 1 micrometerto 8 micrometers.
 15. The semiconductor package of claim 10, wherein thewidth of the joint pads is about 20 micrometers to 400 micrometers. 16.The semiconductor package of claim 10, wherein the thickness of thepillar is about 70 micrometers to 200 micrometers.
 17. The semiconductorpackage of claim 10, wherein the width of the pillar is about 50micrometers to 300 micrometers.
 18. The semiconductor package of claim10, the metal caps are made of at least one of solder, nickel, gold, andcopper.
 19. The semiconductor package of claim 10, the thickness of themetal caps is about 10 micrometers to 20 micrometers.